Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

RS Stock No.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

Price Each (In a Pack of 20)**

€0.15

(exc. VAT)

€0.18

(inc. VAT)

1600 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 +	€0.15	€3.00

**price indicative

RS Stock No.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Si1029X, Complementary N- and P-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	190 mA, 300 mA
Maximum Drain Source Voltage	60 V
Package Type	SC-89-6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	3 Ω, 8 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	250 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.7mm
Typical Gate Charge @ Vgs	1700 nC @ 15 V, 750 nC @ 4.5 V
Length	1.7mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Height	0.6mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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