Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

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RS Stock No.:
165-7183
Mfr. Part No.:
SIA517DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

SC-70

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.7nC

Maximum Power Dissipation Pd

6.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-8V, +8V

Maximum Operating Temperature

+150°C

Transistor Configuration

Isolated

Width

2.15mm

Height

800μm

Length

2.15mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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