onsemi N-Channel MOSFET, 23 A, 100 V, 3-Pin DPAK NTD6415ANLT4G
- RS Stock No.:
- 802-1030
- Mfr. Part No.:
- NTD6415ANLT4G
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tape of 10 units)*
€11.46
(exc. VAT)
€14.10
(inc. VAT)
In Stock
- 140 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
---|---|---|
10 - 90 | €1.146 | €11.46 |
100 - 240 | €0.988 | €9.88 |
250 + | €0.857 | €8.57 |
*price indicative
- RS Stock No.:
- 802-1030
- Mfr. Part No.:
- NTD6415ANLT4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 23 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 56 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 83 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 20 nC @ 4.5 V | |
Width | 6.22mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 2.38mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 56 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 20 nC @ 4.5 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
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