Vishay Single Si7129DN 1 Type P, Type P-Channel MOSFET, 35 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3

Brand

Vishay

Transistor Configuration

Single

Series

Si7129DN

Number of Elements per Chip

1

Channel Type

Type P, Type P

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

35 A

Maximum Drain Source Voltage (Vds)

30 V

Channel Mode

Enhancement

Pin Count

8

Package Type

PowerPAK 1212-8

Automotive Standard

No

Forward Voltage (Vf)

1.2 V

Height

1.07 mm

Length

3.15 mm

Maximum Drain Source Resistance (Rds)

20 mΩ

Maximum Gate Source Voltage (Vgs)

-20 V, +20 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

52.1 W

Minimum Operating Temperature

-50 °C

Mount Type

Surface

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Typical Gate Charge (Qg) @ Vgs

24.6 nC

Width

3.15 mm