Vishay Single Si7129DN 1 Type P, Type P-Channel MOSFET, 35 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- RS Stock No.:
- 818-1384
- Mfr. Part No.:
- SI7129DN-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
€14.34
(exc. VAT)
€17.64
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | €0.717 | €14.34 |
| 100 - 180 | €0.674 | €13.48 |
| 200 - 480 | €0.645 | €12.90 |
| 500 - 980 | €0.574 | €11.48 |
| 1000 + | €0.538 | €10.76 |
*price indicative
- RS Stock No.:
- 818-1384
- Mfr. Part No.:
- SI7129DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si7129DN | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52.1W | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 24.6nC | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.15 mm | |
| Height | 1.07mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 3.15mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si7129DN | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52.1W | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 24.6nC | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 3.15 mm | ||
Height 1.07mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 3.15mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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