Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Price Each (In a Pack of 100)**

€0.242

(exc. VAT)

€0.298

(inc. VAT)

Stock check temporarily unavailable - call for stock availability

Units	Per unit	Per Pack**
100 +	€0.242	€24.20

**price indicative

RS Stock No.:: 822-2532
Mfr. Part No.:: DMG6602SVT-7
Manufacturer:: DiodesZetex

DMG6602SVT-7 Complementary Pair Enhancement MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	1.6mm
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Length	2.9mm
Number of Elements per Chip	2
Transistor Material	Si
Height	0.9mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Dual N/P-Channel MOSFET, Diodes Inc.

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