Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 7.3 A, 30 V Enhancement, 8-Pin SOIC IRF7389TRPBF
- RS Stock No.:
- 826-8908
- Mfr. Part No.:
- IRF7389TRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
€15.86
(exc. VAT)
€19.50
(inc. VAT)
Temporarily out of stock
- Shipping from 29 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | €0.793 | €15.86 |
| 100 - 180 | €0.564 | €11.28 |
| 200 - 480 | €0.524 | €10.48 |
| 500 - 980 | €0.492 | €9.84 |
| 1000 + | €0.453 | €9.06 |
*price indicative
- RS Stock No.:
- 826-8908
- Mfr. Part No.:
- IRF7389TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 98mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 98mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Dual N/P-Channel Power MOSFET, Infineon
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