Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

RS Stock No.:: 826-9064
Mfr. Part No.:: SPD04P10PLGBTMA1
Manufacturer:: Infineon

Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

Bulk discount available

Subtotal (1 pack of 50 units)**

€34.30

(exc. VAT)

€42.20

(inc. VAT)

999999 Within 1 working day(s) (IE stock)*

999999 Within 2 working day(s) (EU stock)

* Delivery dates may change based on your chosen quantity and delivery address.

Real time stock check

Units	Per unit	Per Pack**
50 - 200	€0.686	€34.30
250 - 950	€0.448	€22.40
1000 - 2450	€0.35	€17.50
2500 +	€0.294	€14.70

**price indicative

RS Stock No.:: 826-9064
Mfr. Part No.:: SPD04P10PLGBTMA1
Manufacturer:: Infineon

SPD04P10PL G, SIPMOS Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.2 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.05 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	12 nC @ 10 V
Length	6.73mm
Width	6.22mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	2.41mm

Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

Infineon SIPMOS® P-Channel MOSFETs

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