P-Channel MOSFET, 1.17 A, 60 V, 3-Pin SOT-223 Infineon BSP315PH6327XTSA1
- RS Stock No.:
- 826-9238
- Mfr. Part No.:
- BSP315PH6327XTSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 50 units)**
€32.50
(exc. VAT)
€40.00
(inc. VAT)
8950 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Pack** |
|---|---|---|
| 50 - 50 | €0.65 | €32.50 |
| 100 - 200 | €0.50 | €25.00 |
| 250 - 450 | €0.468 | €23.40 |
| 500 - 1200 | €0.435 | €21.75 |
| 1250 + | €0.403 | €20.15 |
**price indicative
- RS Stock No.:
- 826-9238
- Mfr. Part No.:
- BSP315PH6327XTSA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.17 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 800 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Width | 3.5mm | |
| Typical Gate Charge @ Vgs | 5.2 nC @ 10 V | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.17 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 800 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 6.5mm | ||
Width 3.5mm | ||
Typical Gate Charge @ Vgs 5.2 nC @ 10 V | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
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