Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 250 units)*

€24.50

(exc. VAT)

€30.25

(inc. VAT)

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250 +€0.098€24.50

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RS Stock No.:
827-0109
Mfr. Part No.:
BSS806NEH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS 2

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

82mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.82V

Maximum Power Dissipation Pd

500mW

Typical Gate Charge Qg @ Vgs

1.7nC

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

2.9mm

Width

1.3 mm

Height

1mm

Standards/Approvals

No

Distrelec Product Id

304-44-429

Automotive Standard

AEC-Q101

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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