Infineon HEXFET N-Channel MOSFET, 104 A, 150 V, 3-Pin TO-220AB IRFB4115GPBF
- RS Stock No.:
- 827-3953
- Mfr. Part No.:
- IRFB4115GPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
€7.84
(exc. VAT)
€9.64
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | €3.92 | €7.84 |
| 50 - 98 | €3.04 | €6.08 |
| 100 - 248 | €2.64 | €5.28 |
| 250 - 498 | €2.50 | €5.00 |
| 500 + | €2.255 | €4.51 |
*price indicative
- RS Stock No.:
- 827-3953
- Mfr. Part No.:
- IRFB4115GPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 104 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 380 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 77 nC @ 10 V | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 16.51mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 104 A | ||
Maximum Drain Source Voltage 150 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 380 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 77 nC @ 10 V | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||