N-Channel MOSFET, 161 A, 30 V, 3-Pin DPAK Infineon IRLR7843TRPBF

RS Stock No.:: 830-3382
Mfr. Part No.:: IRLR7843TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 161 A, 30 V, 3-Pin DPAK Infineon IRLR7843TRPBF

Subtotal (1 pack of 10 units)**

€7.73

(exc. VAT)

€9.51

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 +	€0.773	€7.73

**price indicative

RS Stock No.:: 830-3382
Mfr. Part No.:: IRLR7843TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF

This MOSFET is tailored for high-performance applications in the electrical and electronics sectors, especially suitable for automotive and industrial needs. Its HEXFET technology ensures impressive efficiency and reliability, making it ideal for high-frequency synchronous buck converters and isolated DC-DC converters. The device effectively manages power dissipation, enhancing the performance of electronic systems.

Features & Benefits

• Extremely low RDS(on) optimises power loss and efficiency
• High continuous drain current rating supports intensive applications
• Designed for high operating temperatures to ensure performance
• Lead-free construction meets environmentally conscious design standards
• Low gate charge improves switching behaviour in circuits

Applications

• Used in high-frequency synchronous buck converters
• Employed in isolated DC-DC converters for telecom systems
• Serves automotive power management systems
• Suitable for industrial power supplies requiring enhanced efficiency
• Ideal for power regulation in computer processors

What are the typical thermal performance characteristics?

The maximum operating temperature is +175°C with a thermal resistance of 50°C/W from junction to ambient, ensuring effective performance in thermal environments.

How does the low RDS(on) affect overall circuit design?

Low RDS(on) reduces conduction losses, leading to improved efficiency under varying load conditions, which is crucial for high-performance designs.

Can it handle pulse currents effectively?

Yes, it can accommodate pulsed drain currents of up to 620 A, ensuring operational reliability under dynamic loads.

What mounting methods are compatible with this component?

As a surface mount component in DPAK package, it is suitable for automated assembly processes.

Is it suitable for use in automotive applications?

Yes, its specifications, including a maximum drain-source voltage rating of 30V, make it fitting for automotive power systems.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	161 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.3V
	Minimum Gate Threshold Voltage	1.4V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	34 nC @ 4.5 V
	Number of Elements per Chip	1
	Width	6.22mm
	Minimum Operating Temperature	-55 °C
	Height	2.39mm
	Forward Diode Voltage	1V

	Select all
	Manufacturer Infineon
	Channel Type N
	Maximum Continuous Drain Current 161 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.3V
	Minimum Gate Threshold Voltage 1.4V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 34 nC @ 4.5 V
	Number of Elements per Chip 1
	Width 6.22mm
	Minimum Operating Temperature -55 °C
	Height 2.39mm
	Forward Diode Voltage 1V