Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

€736.00

(exc. VAT)

€906.00

(inc. VAT)

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Per Reel*
2000 - 2000€0.368€736.00
4000 +€0.35€700.00

*price indicative

RS Stock No.:
217-2621
Mfr. Part No.:
IRFR3709ZTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

79W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

2.39mm

Standards/Approvals

No

Width

6.22 mm

Length

6.37mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

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