MPN

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

RS Stock No.:: 896-2640
Mfr. Part No.:: TK10P60W,RVQ(S
Manufacturer:: Toshiba

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

Subtotal (1 pack of 5 units)*

€3.06

(exc. VAT)

€3.765

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Pack*
5 +	€0.612	€3.06

*price indicative

RS Stock No.:: 896-2640
Mfr. Part No.:: TK10P60W,RVQ(S
Manufacturer:: Toshiba

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	9.7 A
	Maximum Drain Source Voltage	600 V
	Series	TK
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	430 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Maximum Power Dissipation	80 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	7.18mm
	Maximum Operating Temperature	+150 °C
	Length	6.6mm
	Typical Gate Charge @ Vgs	20 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Height	2.3mm

	Select all
	Brand Toshiba
	Channel Type N
	Maximum Continuous Drain Current 9.7 A
	Maximum Drain Source Voltage 600 V
	Series TK
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 430 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Maximum Power Dissipation 80 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 7.18mm
	Maximum Operating Temperature +150 °C
	Length 6.6mm
	Typical Gate Charge @ Vgs 20 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Height 2.3mm

COO (Country of Origin):: CN

MOSFET Transistors, Toshiba

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

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