P-Channel MOSFET, 8.83 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1

RS Stock No.:: 911-4824
Mfr. Part No.:: SPD08P06PGBTMA1
Manufacturer:: Infineon

P-Channel MOSFET, 8.83 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1

Subtotal (1 reel of 2500 units)**

€547.50

(exc. VAT)

€672.50

(inc. VAT)

2500 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
2500 +	€0.219	€547.50

**price indicative

RS Stock No.:: 911-4824
Mfr. Part No.:: SPD08P06PGBTMA1
Manufacturer:: Infineon

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

Infineon SIPMOS® Series MOSFET, 8.8A Maximum Continuous Drain Current, 42W Maximum Power Dissipation - SPD08P06PGBTMA1

This MOSFET is designed for applications requiring efficient switching and control. It can handle continuous drain currents of 8.8A and a drain-source voltage of 60V, suitable for various electronic circuits. The device operates effectively within a broad temperature range, enhancing performance in challenging environments.

Features & Benefits

• Enhanced mode operation ensures efficient switching performance
• High power capacity caters to strong electronic applications
• Low Rds(on) minimises energy losses during operation
• Utilises DPAK package for effective surface mount applications

Applications

• Applicable in automotive electronic controls for high reliability
• Ideal for power management systems in industrial equipment
• Suitable for battery management systems in electric vehicles
• Utilised in inverter technology for renewable energy systems
• Used in electronic switching devices for consumer products

What are the implications of using a P-channel configuration?

P-channel configurations facilitate easy integration in high-side switch applications, providing convenient control within circuits.

How does the thermal performance affect longevity?

The capability to operate at up to +175°C enhances reliability and contributes to a longer lifespan in harsh environments.

What is the significance of the AEC-Q101 qualification?

This qualification confirms its suitability for automotive applications, meeting stringent reliability and safety standards.

Can this be used in conjunction with other MOSFETs?

Yes, it can be integrated with other components to create complementary circuits for efficient multi-switching applications.

What factors influence the power dissipation in this device?

Key factors include ambient temperature, drain current, and duty cycle during operation, all affecting overall thermal performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	8.83 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	42 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	10 nC @ 10 V
Length	6.5mm
Width	6.22mm
Number of Elements per Chip	1
Height	2.3mm
Minimum Operating Temperature	-55 °C