Infineon Single HEXFET 1 N-Channel MOSFET, 179 A, 30 V Enhancement, 3-Pin TO-252 IRFR8314TRPBF

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
915-5027
Mfr. Part No.:
IRFR8314TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Transistor Configuration

Single

Series

HEXFET

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

179 A

Maximum Drain Source Voltage (Vds)

30 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-252

Forward Voltage (Vf)

1 V

Height

2.39 mm

Length

6.73 mm

Maximum Drain Source Resistance (Rds)

3.1 mΩ

Maximum Gate Source Voltage (Vgs)

20 V, -20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

125 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Width

7.49 mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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