STMicroelectronics Type N-Channel MOSFET, 9 A, 800 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 920-8865
- Mfr. Part No.:
- STW10NK80Z
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
€68.76
(exc. VAT)
€84.57
(inc. VAT)
Temporarily out of stock
- 30 unit(s) shipping from 07 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | €2.292 | €68.76 |
| 90 - 480 | €1.827 | €54.81 |
| 510 - 960 | €1.63 | €48.90 |
| 990 - 4980 | €1.362 | €40.86 |
| 5010 + | €1.318 | €39.54 |
*price indicative
- RS Stock No.:
- 920-8865
- Mfr. Part No.:
- STW10NK80Z
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 STW10NK80Z
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP10NK80Z
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP10NK80ZFP
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247 STW12NK80Z