ams OSRAM, BPX 65 IR Si Photodiode, Through Hole TO-18
- RS Stock No.:
- 912-8306
- Mfr. Part No.:
- BPX 65
- Manufacturer:
- ams OSRAM
Specifications |
|---|
Spectrums Detected:Infrared |
Wavelength of Peak Sensitivity:850nm |
Package Type:TO-18 |
Amplifier Function:No |
Mounting Type:Through Hole |
View datasheets |
1680 In stock for delivery within 2 working days
Price Each (In a Tray of 120)
€3.507
(exc. VAT)
€4.314
(inc. VAT)
| units | Per unit | Per Tray* |
| 120 + | €3.507 | €420.84 |
| *price indicative | ||
- RS Stock No.:
- 912-8306
- Mfr. Part No.:
- BPX 65
- Manufacturer:
- ams OSRAM
Legislation and Compliance
Product Details
PIN Photodiode - TO-18 Package
The BPX 65 PIN photodiode, from OSRAM Opto Semiconductors, are in TO-18 metal can packages. The metal can is hermetically sealed, making the BPX 65 ideal for applications in harsh environments up to 125°C. Other suitable applications include industrial electronics, high speed photo detectors and for control/drive circuits.
Features of the BPX 65 silicon PIN photodiode:
TO-18 metal can package
Through-hole mounting
Wavelength: 350 to 1100 nm
Short switching time
TO-18 metal can package
Through-hole mounting
Wavelength: 350 to 1100 nm
Short switching time
IR Photodiodes, OSRAM Opto Semiconductors
Specifications
| Attribute | Value |
| Spectrums Detected | Infrared |
| Wavelength of Peak Sensitivity | 850nm |
| Package Type | TO-18 |
| Amplifier Function | No |
| Mounting Type | Through Hole |
| Number of Pins | 2 |
| Diode Material | Si |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1100nm |
| Typical Fall Time | 0.012µs |
| Width | 5.5mm |
| Diameter | 4.8mm |
| Short Circuit Current | 10µA |
| Polarity | Positive |
| Typical Rise Time | 0.012µs |