infineon mosfets
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    Infineon MOSFETs

    6506 Products showing for Infineon MOSFETs

    Infineon
    N
    84 A
    60 V
    8.5 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    140 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    58 nC @ 10 V
    4.83mm
    Infineon
    N
    65 A
    200 V
    24 mΩ
    TO-220AB
    HEXFET
    5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    330 W
    -
    Single
    10.66mm
    +175 °C
    1
    Si
    70 nC @ 10 V
    4.82mm
    Infineon
    N
    150 A
    30 V
    3 mΩ
    TO-220AB
    HEXFET
    2.35V
    Through Hole
    1.35V
    3
    -20 V, +20 V
    Enhancement
    140 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    36 nC @ 4.5 V
    4.83mm
    Infineon
    N
    110 A
    55 V
    8 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    200 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    146 nC @ 10 V
    4.69mm
    Infineon
    N
    30 A
    55 V
    35 mΩ
    TO-220AB
    HEXFET
    2V
    Through Hole
    1V
    3
    -16 V, +16 V
    Enhancement
    68 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    25 nC @ 5 V
    4.69mm
    Infineon
    N
    8 A
    650 V
    0.19 O
    TO-220 FP
    CoolMOS™ C7
    4V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Infineon
    N
    57 A
    100 V
    25 mΩ
    TO-247AC
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    200 W
    -
    Single
    15.9mm
    +175 °C
    1
    Si
    190 nC @ 10 V
    5.3mm
    Infineon
    N
    65 A
    200 V
    24 mΩ
    TO-220AB
    HEXFET
    5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    330 W
    -
    Single
    10.66mm
    +175 °C
    1
    Si
    70 nC @ 10 V
    4.82mm
    Infineon
    N
    300 A
    100 V
    3.7 mΩ
    HSOF-8
    OptiMOS™ 3
    -
    Surface Mount
    -
    8
    -20 V, +20 V
    Enhancement
    375 W
    -
    Single
    10.58mm
    +175 °C
    1
    Si
    156 nC @ 10 V
    10.1mm
    Infineon
    N
    327 A
    40 V
    2 mΩ
    TO-247AC
    HEXFET
    2.5V
    Through Hole
    1V
    3
    -20 V, +20 V
    Enhancement
    341 W
    -
    Single
    15.87mm
    +175 °C
    1
    Si
    108 nC @ 4.5 V
    5.31mm
    Infineon
    N
    80 A
    75 V
    9 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    140 W
    -
    Single
    10.66mm
    +175 °C
    1
    Si
    56 nC @ 10 V
    4.82mm
    Infineon
    N
    300 A
    100 V
    3.7 mΩ
    HSOF-8
    OptiMOS™ 3
    -
    Surface Mount
    -
    8
    -20 V, +20 V
    Enhancement
    375 W
    -
    Single
    10.58mm
    +175 °C
    1
    Si
    156 nC @ 10 V
    10.1mm
    Infineon
    N
    17 A
    800 V
    290 mΩ
    TO-220
    CoolMOS™ C3
    3.9V
    Through Hole
    2.1V
    3
    -20 V, +20 V
    Enhancement
    227 W
    -
    Single
    10.36mm
    +150 °C
    1
    Si
    88 nC @ 10 V
    4.57mm
    Infineon
    N
    150 A
    30 V
    3 mΩ
    TO-220AB
    HEXFET
    2.35V
    Through Hole
    1.35V
    3
    -20 V, +20 V
    Enhancement
    140 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    36 nC @ 4.5 V
    4.83mm
    Infineon
    N
    2.6 A
    600 V
    3.4 Ohm
    IPAK SL (TO-251 SL)
    CoolMOS™ CE
    3.5V
    Through Hole
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    62 A
    30 V
    9 mΩ
    TO-220AB
    HEXFET
    2.35V
    Through Hole
    1.35V
    3
    -20 V, +20 V
    Enhancement
    65 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    7.6 nC @ 4.5 V
    4.83mm
    Infineon
    N
    49 A
    55 V
    17.5 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    94 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    63 nC @ 10 V
    9.02mm
    Infineon
    N
    42 A
    100 V
    36 mΩ
    TO-247AC
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    160 W
    -
    Single
    15.9mm
    +175 °C
    1
    Si
    110 nC @ 10 V
    5.3mm
    Infineon
    N
    33 A
    100 V
    44 mΩ
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    130 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    71 nC @ 10 V
    9.65mm
    Infineon
    N
    1.6 A
    100 V
    235 mΩ
    SOT-23
    HEXFET
    2.5V
    Surface Mount
    1V
    3
    -16 V, +16 V
    Enhancement
    1.3 W
    -
    Single
    3.04mm
    +150 °C
    1
    Si
    2.5 nC @ 4.5 V
    1.4mm
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