onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS Stock No.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
Subtotal (1 tube of 50 units)*
€50.00
(exc. VAT)
€61.50
(inc. VAT)
In Stock
- 150 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | €1.00 | €50.00 |
*price indicative
- RS Stock No.:
- 184-0971
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 20MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 40 | |
| Transistor Polarity | PNP | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.18mm | |
| Length | 420μm | |
| Standards/Approvals | No | |
| Width | 190μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 20MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 40 | ||
Transistor Polarity PNP | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1.18mm | ||
Length 420μm | ||
Standards/Approvals No | ||
Width 190μm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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