Infineon BFP842ESDH6327XTSA1 Bipolar Transistor, 40 mA NPN, 3.7 V, 4-Pin SOT-343
- RS Stock No.:
- 273-2850
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Manufacturer:
- Infineon
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€2.93
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€3.60
(inc. VAT)
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- 20 unit(s) ready to ship from another location
- Plus 3,000 unit(s) shipping from 28 April 2027
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | €0.293 | €2.93 | - |
| 50 - 90 | €0.287 | €2.87 | €0.30 |
| 100 - 240 | €0.218 | €2.18 | €7.50 |
| 250 - 990 | €0.214 | €2.14 | €19.75 |
| 1000 + | €0.167 | €1.67 | €126.00 |
*price indicative
- RS Stock No.:
- 273-2850
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.7V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Transition Frequency ft | 57GHz | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 120mW | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.7V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Transition Frequency ft 57GHz | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 120mW | ||
Minimum Operating Temperature -55°C | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
The Infineon high performance RF heterojunction bipolar transistor with an integrated ESD protection suitable for 2.3 to 3.5 GHz LNA applications.
Suitable for low voltage applications
It has application in wireless communications like WLAN, WiMAX and Bluetooth
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