onsemi NCV57000DWR2G, MOSFET 1, 6 A, 5V 16-Pin, SOIC

High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages
Short Propagation Delays with Accurate Matching
DESAT with Soft Turn Off
Active Miller Clamp and Negative Gate Voltage
High Transient & Electromagnetic Immunity
5 kV Galvanic Isolation
Improves PWM signal integrity
Protection against overload and short circuits
Prevents spurious gate turn-on
Ruggedness in fast slew rate high voltage and high current switching applications
Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection
Applications
Automotive Power Supplies
HEV/EV Traction Inverters
OBC
BSG Inverters
PTC Heaters
EV Chargers