onsemi AFGHL75T65SQDC, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 214-8784
- Mfr. Part No.:
- AFGHL75T65SQDC
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 unit)*
€8.43
(exc. VAT)
€10.37
(inc. VAT)
Supply shortage
- 350 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit |
|---|---|
| 1 - 9 | €8.43 |
| 10 + | €7.26 |
*price indicative
- RS Stock No.:
- 214-8784
- Mfr. Part No.:
- AFGHL75T65SQDC
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | PPAP capable, AEC-Q101 | |
| Series | Trench | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals PPAP capable, AEC-Q101 | ||
Series Trench | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor AFGHL series is IGBT which offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification.
High current capability
Fast switching
Tight parameter distribution