Infineon IGBT Module, 75 A 1200 V

Subtotal (1 tray of 10 units)*

€1,000.37

(exc. VAT)

€1,230.46

(inc. VAT)

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Units
Per unit
Per Tray*
10 +€100.037€1,000.37

*price indicative

RS Stock No.:
244-5834
Mfr. Part No.:
FP50R12KE3BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

75A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

280W

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Series

FP50R12KE3

Standards/Approvals

No

Automotive Standard

No

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)

Gate-emitter peak voltage + /- 20 V

Collector-emitter saturation voltage 2.30 V

Gate-emitter leakage current 400 nA

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