Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V
- RS Stock No.:
- 244-5834
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Manufacturer:
- Infineon
Subtotal (1 tray of 10 units)*
€1,000.37
(exc. VAT)
€1,230.46
(inc. VAT)
Temporarily out of stock
- Shipping from 22 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 10 + | €100.037 | €1,000.37 |
*price indicative
- RS Stock No.:
- 244-5834
- Mfr. Part No.:
- FP50R12KE3BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 280 W | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 280 W | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA
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