Infineon FF900R17ME7B11BPSA1 IGBT Module, 900 A 1700 V
- RS Stock No.:
- 250-0226
- Mfr. Part No.:
- FF900R17ME7B11BPSA1
- Manufacturer:
- Infineon
Subtotal (1 tray of 10 units)*
€3,451.53
(exc. VAT)
€4,245.38
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tray* |
|---|---|---|
| 10 + | €345.153 | €3,451.53 |
*price indicative
- RS Stock No.:
- 250-0226
- Mfr. Part No.:
- FF900R17ME7B11BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 900 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 20 mW | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 900 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
The Infineon EconoDUAL™ 3 1700 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Also available with pre-applied Thermal Interface Material.
Integrated temperature sensor
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
High power density
Isolated base plate
PressFIT contact technology
Standard housing
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
High power density
Isolated base plate
PressFIT contact technology
Standard housing
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