onsemi J109, Single Type N-Channel JFET-Channel JFET 40 mA, 3-Pin TO-92
- RS Stock No.:
- 806-1750P
- Mfr. Part No.:
- J109
- Manufacturer:
- onsemi
Bulk discount available
Subtotal 100 units (supplied in a bag)*
€32.10
(exc. VAT)
€39.50
(inc. VAT)
In Stock
- Plus 3,575 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 225 | €0.321 |
| 250 - 475 | €0.278 |
| 500 + | €0.244 |
*price indicative
- RS Stock No.:
- 806-1750P
- Mfr. Part No.:
- J109
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Sub Type | JFET | |
| Product Type | JFET | |
| Configuration | Single | |
| Mount Type | Through Hole | |
| Package Type | TO-92 | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | 40 mA | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Maximum Gate Source Voltage Vgs | -25 V | |
| Maximum Power Dissipation Pd | 625mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.58mm | |
| Width | 3.86 mm | |
| Length | 4.58mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Sub Type JFET | ||
Product Type JFET | ||
Configuration Single | ||
Mount Type Through Hole | ||
Package Type TO-92 | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids 40 mA | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Maximum Gate Source Voltage Vgs -25 V | ||
Maximum Power Dissipation Pd 625mW | ||
Maximum Operating Temperature 150°C | ||
Height 4.58mm | ||
Width 3.86 mm | ||
Length 4.58mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.