STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45

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€15.36

(exc. VAT)

€18.89

(inc. VAT)

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10 - 90€1.536€15.36
100 - 240€1.459€14.59
250 - 490€1.355€13.55
500 - 990€1.244€12.44
1000 +€1.198€11.98

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Packaging Options:
RS Stock No.:
151-447
Mfr. Part No.:
STS1DNC45
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.4A

Maximum Drain Source Voltage Vds

450V

Package Type

SO-8

Series

SuperMESH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-65°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Standard outline for easy automated surface mount assembly

Gate charge minimized

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