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Nexperia NSF030120D7A0 Type N-Channel MOSFET, 67 A, 1200 V Enhancement, 7-Pin TO-263 NSF030120D7A0J

RS Stock No.:: 219-443
Mfr. Part No.:: NSF030120D7A0J
Manufacturer:: Nexperia

Nexperia NSF030120D7A0 Type N-Channel MOSFET, 67 A, 1200 V Enhancement, 7-Pin TO-263 NSF030120D7A0J

Bulk discount available

Subtotal (1 tape of 1 unit)*

€22.42

(exc. VAT)

€27.58

(inc. VAT)

In Stock

800 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Tape(s)	Per Tape
1 - 9	€22.42
10 - 99	€20.17
100 +	€18.60

*price indicative

RS Stock No.:: 219-443
Mfr. Part No.:: NSF030120D7A0J
Manufacturer:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	67A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-263
	Series	NSF030120D7A0
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	113nC
	Maximum Power Dissipation Pd	306W
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Nexperia
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 67A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-263
	Series NSF030120D7A0
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 113nC
	Maximum Power Dissipation Pd 306W
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NSF030120D7A0J

COO (Country of Origin):: CN

The Nexperia SiC Power MOSFET comes in a compact 7-pin TO-263 plastic package for surface mounting on PCBs. Its excellent RDS(on) temperature stability and fast switching speed make it ideal for high-power, high-voltage industrial applications, including electric vehicle charging infrastructure, photovoltaic inverters, and motor drives.

Fast reverse recovery

Fast switching speed

Temperature independent turn off switching losses

Very fast and robust intrinsic body diode

Nexperia NSF030120D7A0 Type N-Channel MOSFET, 67 A, 1200 V Enhancement, 7-Pin TO-263 NSF030120D7A0J

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