Microchip PD70224 N-Channel MOSFET, 2 A, 74 V, 40-Pin QFN PD70224ILQ-TR
- RS Stock No.:
- 333-012
- Mfr. Part No.:
- PD70224ILQ-TR
- Manufacturer:
- Microchip
Subtotal (1 reel of 2000 units)*
€7,848.00
(exc. VAT)
€9,654.00
(inc. VAT)
Temporarily out of stock
- Shipping from 19 July 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | €3.924 | €7,848.00 |
*price indicative
- RS Stock No.:
- 333-012
- Mfr. Part No.:
- PD70224ILQ-TR
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 74V | |
| Series | PD70224 | |
| Package Type | QFN | |
| Mount Type | Surface | |
| Pin Count | 40 | |
| Maximum Drain Source Resistance Rds | 0.26Ω | |
| Forward Voltage Vf | 192mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 6mm | |
| Height | 1mm | |
| Standards/Approvals | IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | |
| Width | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 74V | ||
Series PD70224 | ||
Package Type QFN | ||
Mount Type Surface | ||
Pin Count 40 | ||
Maximum Drain Source Resistance Rds 0.26Ω | ||
Forward Voltage Vf 192mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 6mm | ||
Height 1mm | ||
Standards/Approvals IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | ||
Width 8mm | ||
Automotive Standard No | ||
The Microchip Dual pack of MOSFET based full bridge rectifiers. It contains low Rds 0.16Ω N channel MOSFETs for much higher overall efficiency and higher output power, particularly when used in Powered Devices (PDs) for PoE applications. The entire drive circuitry for driving the MOSFETs is on chip, including a charge pump for driving the high side N channel MOSFETs.
Active circuit with low forward drop to replace dissipative passive diode bridges
Self contained drive circuitry for MOSFETs
Designed to support IEEE-802.3af / at / bt and PoH
Integrated 0.16 Ohm N channel MOSFETs for 0.3 Ohm total path resistance
Power present indicator signals for identifying 4 pair bridge power
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