Infineon IMB Type N-Channel MOSFET, 8.1 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- RS Stock No.:
- 349-107
- Mfr. Part No.:
- IMBG120R234M2HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
€9.41
(exc. VAT)
€11.574
(inc. VAT)
In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | €4.705 | €9.41 |
| 20 - 198 | €4.24 | €8.48 |
| 200 - 998 | €3.905 | €7.81 |
| 1000 - 1998 | €3.625 | €7.25 |
| 2000 + | €3.24 | €6.48 |
*price indicative
- RS Stock No.:
- 349-107
- Mfr. Part No.:
- IMBG120R234M2HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 622mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 80W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Maximum Operating Temperature | 200°C | |
| Length | 15mm | |
| Height | 4.5mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 622mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 80W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Maximum Operating Temperature 200°C | ||
Length 15mm | ||
Height 4.5mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon IMB Series MOSFET, 1200V Maximum Drain Source Voltage, 80W Maximum Power Dissipation - IMBG120R234M2HXTMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications. It delivers controlled conduction for switching and conversion functions while operating across a wide ambient range. The component is configured in a seven-pin PG-TO263-7 package for integration onto power boards and is suitable where robust gate drive and high blocking voltage are required.
Features and Benefits:
• 1200V drain rating enables high-voltage switching applications
• 8.1A continuous drain current supports moderate power throughput
• 80W power dissipation allows sustained thermal loading
• 622mΩ low Rds(on) reduces conduction losses during operation
• 7.9nC gate charge enables relatively fast switching transitions
• 25V gate tolerance ensures compatibility with common gate drives
• 8.1A continuous drain current supports moderate power throughput
• 80W power dissipation allows sustained thermal loading
• 622mΩ low Rds(on) reduces conduction losses during operation
• 7.9nC gate charge enables relatively fast switching transitions
• 25V gate tolerance ensures compatibility with common gate drives
Applications
• Used for high-voltage DC-DC converters in industrial systems
• Suitable for power switching in renewable-energy inverters
• Ideal for motor-drive front-ends with elevated voltage rails
• Can be used for switch-mode power supplies and regulators
• Used with thermal management for compact power modules
• Suitable for power switching in renewable-energy inverters
• Ideal for motor-drive front-ends with elevated voltage rails
• Can be used for switch-mode power supplies and regulators
• Used with thermal management for compact power modules
What thermal extremes can this device withstand during operation?
It is rated to function between -55°C and 200°C, allowing use in environments with very low temperatures and exceptionally high junction or ambient conditions when suitably mounted and cooled.
How does the pin configuration affect PCB design and mounting?
The seven-pin PG-TO263-7 layout concentrates power and gate connections for effective heat transfer to the board and simplifies routing of drain and source tracks for low‑impedance current paths.
What standards and environmental constraints are reflected in its manufacture?
Production conforms to JEDEC47/20/22 handling recommendations and the device meets RoHS requirements for restricted substances.
How should designers account for switching performance in high-frequency circuits?
Use the typical 7.9nC gate charge figure to estimate gate-drive energy and select gate drivers and deadtime settings to balance switching losses and electromagnetic emission control.
Related links
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