Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-VITFN-10 ISG0613N04NM6HATMA1

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Subtotal (1 pack of 2 units)*

€8.55

(exc. VAT)

€10.516

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18€4.275€8.55
20 - 198€3.85€7.70
200 - 998€3.55€7.10
1000 - 1998€3.295€6.59
2000 +€2.95€5.90

*price indicative

RS Stock No.:
349-393
Mfr. Part No.:
ISG0613N04NM6HATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

299A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-VITFN-10

Series

ISG

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

0.88mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

69nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

167W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249‑2‑21, JEDEC

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in a scalable power block package. Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration.

Minimized conduction losses

Reduced voltage overshoot

High power capability

Superior thermal performance

Lowest loop inductance

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