Infineon IGOT65 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1

RS Stock No.:: 351-882
Mfr. Part No.:: IGOT65R035D2AUMA1
Manufacturer:: Infineon

Infineon IGOT65 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1

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Subtotal (1 unit)*

€13.47

(exc. VAT)

€16.57

(inc. VAT)

In Stock

Plus 800 unit(s) shipping from 19 January 2026

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Units	Per unit
1 - 9	€13.47
10 - 99	€12.12
100 +	€11.18

*price indicative

RS Stock No.:: 351-882
Mfr. Part No.:: IGOT65R035D2AUMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-DSO-20
	Series	IGOT65
	Mount Type	Surface
	Pin Count	20
	Maximum Drain Source Resistance Rds	0.075Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Power Dissipation Pd	134W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-DSO-20
	Series IGOT65
	Mount Type Surface
	Pin Count 20
	Maximum Drain Source Resistance Rds 0.075Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Power Dissipation Pd 134W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGOT65R035D2AUMA1

COO (Country of Origin):: ID

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGOT65 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1

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