STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 6 A, 1200 V Enhancement Mode, 3-Pin H2PAK-2

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

€4.70

(exc. VAT)

€5.78

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 114 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9€4.70
10 - 49€4.57
50 - 99€4.42
100 +€3.82

*price indicative

RS Stock No.:
800-461
Mfr. Part No.:
STH8N120K5-2AG
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

STH285N10F8-6AG

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.65mΩ

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

165W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

14.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

ECOPACK

Width

4.7mm

Length

10.4mm

Height

15.8mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AEC-Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

Related links