Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	25 A
	Maximum Drain Source Voltage	30 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	90 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Maximum Power Dissipation	75 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-15 V, +15 V
	Width	6.22mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	15 nC @ 5 V
	Number of Elements per Chip	1
	Length	6.73mm
	Height	2.38mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 25 A
	Maximum Drain Source Voltage 30 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 90 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Maximum Power Dissipation 75 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -15 V, +15 V
	Width 6.22mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 15 nC @ 5 V
	Number of Elements per Chip 1
	Length 6.73mm
	Height 2.38mm
	Minimum Operating Temperature -55 °C

onsemi P-Channel MOSFET, 25 A, 30 V, 3-Pin DPAK NTD25P03LT4G

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

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