Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	9.4 A
	Maximum Drain Source Voltage	60 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	185 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	13 nC @ 10 V
	Length	6.6mm
	Width	6.1mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Height	2.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 9.4 A
	Maximum Drain Source Voltage 60 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 185 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 13 nC @ 10 V
	Length 6.6mm
	Width 6.1mm
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Height 2.3mm
	Minimum Operating Temperature -55 °C

onsemi P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK FQD11P06TM

Enhancement Mode P-Channel MOSFET, ON Semiconductor

Features and Benefits:

Applications:

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