Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	12 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	9 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	310 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	84 nC @ 10 V
	Width	9.65mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Length	10.67mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 12 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 9 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 310 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 84 nC @ 10 V
	Width 9.65mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Length 10.67mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 4.83mm

onsemi PowerTrench N-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK FDB3632

Automotive N-Channel MOSFET, Fairchild Semiconductor

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