ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

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Subtotal (1 unit)*

€652.50

(exc. VAT)

€802.58

(inc. VAT)

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Units
Per unit
1 - 1€652.50
2 - 4€635.33
5 - 9€619.04
10 +€603.56

*price indicative

RS Stock No.:
144-2259
Mfr. Part No.:
BSM180D12P3C007
Manufacturer:
ROHM
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Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

45.6 mm

Height

17mm

Length

122mm

Number of Elements per Chip

2

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor


Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

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