Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220 IRF1018EPBF

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Subtotal (1 tube of 50 units)*

€38.40

(exc. VAT)

€47.25

(inc. VAT)

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  • 200 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 50€0.768€38.40
100 - 200€0.63€31.50
250 - 450€0.591€29.55
500 - 1200€0.553€27.65
1250 +€0.507€25.35

*price indicative

RS Stock No.:
145-9197
Mfr. Part No.:
IRF1018EPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

9.02mm

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
MX

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