IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

Subtotal (1 tube of 20 units)*

€801.78

(exc. VAT)

€986.18

(inc. VAT)

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Units
Per unit
Per Tube*
20 +€40.089€801.78

*price indicative

RS Stock No.:
146-1770
Mfr. Part No.:
MMIX1F180N25T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

250V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Channel Mode

Enhancement

Maximum Power Dissipation Pd

570W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Height

5.7mm

Width

23.25mm

Length

25.25mm

Number of Elements per Chip

1

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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