IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD MMIX1T550N055T2

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Subtotal (1 unit)*

€46.56

(exc. VAT)

€57.27

(inc. VAT)

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  • Shipping from 15 January 2027
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Units
Per unit
1 - 1€46.56
2 - 4€45.62
5 - 9€44.22
10 - 14€43.76
15 +€43.30

*price indicative

Packaging Options:
RS Stock No.:
875-2500
Mfr. Part No.:
MMIX1T550N055T2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

595nC

Maximum Power Dissipation Pd

830W

Maximum Operating Temperature

175°C

Length

25.25mm

Height

5.7mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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