IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2

Subtotal (1 tube of 10 units)*

€457.31

(exc. VAT)

€562.49

(inc. VAT)

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Per Tube*
10 +€45.731€457.31

*price indicative

RS Stock No.:
146-4239
Mfr. Part No.:
IXFN150N65X2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

145A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-227

Series

HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

335nC

Maximum Power Dissipation Pd

1.04kW

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.6mm

Width

25.07 mm

Length

38.23mm

Automotive Standard

No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

Resonant mode power supplies

High intensity discharge (HID) lamp ballast

AC and DC motor drives

DC-DC converters

Robotic and servo control

Battery chargers

3-level solar inverters

LED lighting

Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings

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