Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	3.2 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	80 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	1.25 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Transistor Material	Si
	Length	2.9mm
	Width	1.3mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	2.4 nC @ 4.5 V
	Minimum Operating Temperature	-55 °C
	Height	0.94mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 3.2 A
	Maximum Drain Source Voltage 20 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 80 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 1.25 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Transistor Material Si
	Length 2.9mm
	Width 1.3mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 2.4 nC @ 4.5 V
	Minimum Operating Temperature -55 °C
	Height 0.94mm

onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G

N-Channel Power MOSFET, 20V, ON Semiconductor

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