Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

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Subtotal (1 pack of 20 units)*

€9.58

(exc. VAT)

€11.78

(inc. VAT)

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Per unit
Per Pack*
20 - 180€0.479€9.58
200 - 480€0.407€8.14
500 - 980€0.383€7.66
1000 - 1980€0.36€7.20
2000 +€0.335€6.70

*price indicative

Packaging Options:
RS Stock No.:
787-9020
Mfr. Part No.:
SI4532CDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

2.78W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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