Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

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Subtotal (1 pack of 20 units)*

€11.98

(exc. VAT)

€14.74

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 180€0.599€11.98
200 - 480€0.509€10.18
500 - 980€0.479€9.58
1000 - 1980€0.45€9.00
2000 +€0.419€8.38

*price indicative

Packaging Options:
RS Stock No.:
787-9020
Mfr. Part No.:
SI4532CDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

2.78W

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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