Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

€12.18

(exc. VAT)

€14.98

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 4,280 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 180€0.609€12.18
200 - 480€0.517€10.34
500 - 980€0.487€9.74
1000 - 1980€0.457€9.14
2000 +€0.426€8.52

*price indicative

Packaging Options:
RS Stock No.:
787-9020
Mfr. Part No.:
SI4532CDY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

2.78W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Width

4 mm

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links