Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Bulk discount available

Subtotal (1 pack of 20 units)**

€11.04

(exc. VAT)

€13.58

(inc. VAT)

2240 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 - 180	€0.552	€11.04
200 - 480	€0.469	€9.38
500 - 980	€0.442	€8.84
1000 - 1980	€0.415	€8.30
2000 +	€0.386	€7.72

**price indicative

RS Stock No.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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