Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.:: 165-7226
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Subtotal (1 reel of 2500 units)**

€585.00

(exc. VAT)

€720.00

(inc. VAT)

Temporarily out of stock - back order for despatch 15-06-2025, delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
2500 +	€0.234	€585.00

**price indicative

RS Stock No.:: 165-7226
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	4mm
Number of Elements per Chip	2
Length	5mm
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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