Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	235 A
	Maximum Drain Source Voltage	30 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	2.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	231 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	160 nC @ 10 V
	Length	10.67mm
	Width	9.65mm
	Number of Elements per Chip	1
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 235 A
	Maximum Drain Source Voltage 30 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 2.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 231 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 160 nC @ 10 V
	Length 10.67mm
	Width 9.65mm
	Number of Elements per Chip 1
	Height 4.83mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 235 A, 30 V, 3-Pin D2PAK AUIRF2903ZS

Automotive N-Channel Power MOSFET, Infineon

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