Infineon Single OptiMOS 3 1 N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-220FP IPA093N06N3GXKSA1
- RS Stock No.:
- 165-8110
- Mfr. Part No.:
- IPA093N06N3GXKSA1
- Manufacturer:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 165-8110
- Mfr. Part No.:
- IPA093N06N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Configuration | Single | |
| Series | OptiMOS 3 | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 43 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220FP | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1 V | |
| Height | 16.15 mm | |
| Length | 10.65 mm | |
| Maximum Drain Source Resistance (Rds) | 9.3 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 33 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 36 nC | |
| Width | 4.85 mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Configuration Single | ||
Series OptiMOS 3 | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 43 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220FP | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1 V | ||
Height 16.15 mm | ||
Length 10.65 mm | ||
Maximum Drain Source Resistance (Rds) 9.3 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 33 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 36 nC | ||
Width 4.85 mm | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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