Infineon Single OptiMOS™ 3 1 N-Channel MOSFET, 70 A, 80 V Enhancement, 3-Pin TO-220 IPP100N08N3GXKSA1

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€14.15

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€17.40

(inc. VAT)

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Per Pack*
10 - 40€1.415€14.15
50 - 190€0.988€9.88
200 - 490€0.832€8.32
500 +€0.73€7.30

*price indicative

Packaging Options:
RS Stock No.:
892-2292
Mfr. Part No.:
IPP100N08N3GXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Transistor Configuration

Single

Series

OptiMOS™ 3

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

70 A

Maximum Drain Source Voltage (Vds)

80 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-220

Forward Voltage (Vf)

1.2 V

Height

15.95 mm

Length

10.36 mm

Maximum Drain Source Resistance (Rds)

18.2 mΩ

Maximum Gate Source Voltage (Vgs)

20 V, -20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

100 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole

Width

4.57 mm

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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