Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	3.2 A
	Maximum Drain Source Voltage	100 V
	Series	PowerTrench
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	189 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.2 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	6.7mm
	Length	3.7mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	4.3 nC @ 10 V
	Height	1.7mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 3.2 A
	Maximum Drain Source Voltage 100 V
	Series PowerTrench
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 189 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.2 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 6.7mm
	Length 3.7mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 4.3 nC @ 10 V
	Height 1.7mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench N-Channel MOSFET, 3.2 A, 100 V, 3-Pin SOT-223 FDT86106LZ

PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor

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