onsemi Isolated PowerTrench 2 N-Channel MOSFET, 5.5 A, 30 V Enhancement, 8-Pin SOIC FDS6930B
- RS Stock No.:
- 166-1789
- Mfr. Part No.:
- FDS6930B
- Manufacturer:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 166-1789
- Mfr. Part No.:
- FDS6930B
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Configuration | Isolated | |
| Series | PowerTrench | |
| Number of Elements per Chip | 2 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 5.5 A | |
| Maximum Drain Source Voltage (Vds) | 30 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 1.5 mm | |
| Length | 5 mm | |
| Maximum Drain Source Resistance (Rds) | 62 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 2 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 3.8 nC | |
| Width | 4 mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Configuration Isolated | ||
Series PowerTrench | ||
Number of Elements per Chip 2 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 5.5 A | ||
Maximum Drain Source Voltage (Vds) 30 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type SOIC | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Height 1.5 mm | ||
Length 5 mm | ||
Maximum Drain Source Resistance (Rds) 62 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 2 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 3.8 nC | ||
Width 4 mm | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS6930B
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC FDS9945
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC FDS3890
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC FDS89141
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC FDS8949
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 20 V Enhancement, 8-Pin SOIC FDS9926A
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC FDS3992