Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	3.75 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Typical Gate Charge @ Vgs	85 nC @ 10 V
	Length	10.67mm
	Number of Elements per Chip	1
	Width	9.65mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 3.75 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Typical Gate Charge @ Vgs 85 nC @ 10 V
	Length 10.67mm
	Number of Elements per Chip 1
	Width 9.65mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 4.83mm

onsemi P-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK FQB34P10TM

Automotive P-Channel MOSFET, Fairchild Semiconductor

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