N-Channel MOSFET, 17 A, 100 V, 8-Pin PQFN8 onsemi FDMS8622
- RS Stock No.:
- 166-2697
- Mfr. Part No.:
- FDMS8622
- Manufacturer:
- onsemi
Subtotal (1 reel of 3000 units)**
€1,488.00
(exc. VAT)
€1,830.00
(inc. VAT)
Temporarily out of stock - back order for despatch 10-08-2025, delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 + | €0.496 | €1,488.00 |
**price indicative
- RS Stock No.:
- 166-2697
- Mfr. Part No.:
- FDMS8622
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PQFN8 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 97 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 31 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PQFN8 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 97 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 31 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6mm | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5 nC @ 10 V | ||
Transistor Material Si | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
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